| PART |
Description |
Maker |
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| F28F008SA-120 E28F008SA-120 E28F008SA-85 F28F008SA |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 8兆（1兆位× 8FlashFileTM记忆
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
| SST39VF1601 SST39VF6401-70-4C-B1K SST39VF6402-70-4 |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
http://
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| 28F016SA |
16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M1 Mx 16, 2 Mx 8) FlashFile存储
|
Intel Corp.
|
| SST39SF040-70-4C-NHE SST39SF020A-70-4I-WHE SST39SF |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Microchip Technology
|
| 28F016SA |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
|
Intel Corporation
|
| SST34HF1601-90-4C-LFP SST34HF1621-70-4C-LFP SST34H |
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory 16兆位并行快闪2 / 4兆位的SRAM ComboMemory
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| DD28F032SA-100 DD28F032SA-070 |
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
|
INTEL[Intel Corporation]
|
| AT52BC6402A-85CI AT52BC6402AT-85CI AT52BC6402A-70C |
64 MBIT FLASH 16 MBIT PSRAM SPECIALTY MEMORY CIRCUIT, PBGA66
64 MBIT FLASH 16 MBIT PSRAM
|
Atmel Corp.
Atmel, Corp.
ATMEL Corporation
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
